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january 2007 rev 9 1/12 12 stl100nh3ll n-channel 30v - 0.0032 ? - 25a - powerflat? (6x5) stripfet? iii power mosfet general features improved die-to-footprint ratio very low profile package (1mm max) very low thermal resistance conduction losses reduced switching losses reduced description this series utilizes the last advanced design rules of st?s proprietary stripfet? technology. this process complete to unique metallization technique realised the most advanced low voltage power mosfet in powerflat?(6x5). the chip- scaled powerflat? packag e allows a significant board space saving , still boosting the performance. applications switching application internal schematic diagram type v dss r ds(on) i d stl100nh3ll 30v <0.0035 ? 25a (1) 1. the value is rated according r thj-pcb powerflat?( 6x5 ) www.st.com order codes part number marking package packaging stl100nh3ll l100nh3ll powerflat? (6x5) tape & reel
contents stl100nh3ll 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
stl100nh3ll electrical ratings 3/12 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs (1) 1. continuous mode gate-source voltage 16 v v gs (2) 2. guaranteed for test time < 15ms gate-source voltage 18 v i d (3) 3. the value is rated according r thj-c drain current (continuous) at t c = 25c 100 a i d (3) drain current (continuous) at t c = 100c 71 a i d (5) drain current (continuous) at t c =100c 15.6 a i dm (4) 4. pulse width limited by safe operating area drain current (pulsed) 100 a i d (5) 5. the value is rated according r thj-pcb drain current (continuous) at t c = 25c 25 a p tot (3) total dissipation at t c = 25c 80 w p tot (5) total dissipation at t c = 25c 4 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case (drain) (steady state) 1.56 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10sec thermal resistance junction-ambient 31.3 c/w table 3. avalanche data symbol parameter value unit i av not-repetitive avalanche current, (pulse width limited by tj max) 12.5 a e as single pulse avalanche energy (starting tj=25c, id=iav, vdd=24v) 1.3 j
electrical characteristics stl100nh3ll 4/12 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 16v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1v r ds(on) static drain-source on resistance v gs = 10v, i d = 12.5a v gs = 4.5v, i d = 12.5a 0.0032 0.004 0.0035 0.005 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =10v, i d = 12.5a 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 4450 655 50 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15v, i d = 25a v gs =4.5v (see figure 7) 30 12.5 10 40 nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 12 3 ?
stl100nh3ll electrical characteristics 5/12 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15v, i d = 12.5a, r g =4.7 ?, v gs =10v (see figure 13) 18 50 75 8 ns ns ns ns table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 25 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 100 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =25a, v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =25a, di/dt = 100a/s, v dd =25v, tj=150c 32 34 2.1 ns nc a
electrical characteristics stl100nh3ll 6/12 2.1 electrical characterist ics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
stl100nh3ll electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized b vdss vs temperature
test circuit stl100nh3ll 8/12 3 test circuit figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform
stl100nh3ll package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data stl100nh3ll 10/12 dim. mm. inch min. typ max. min. typ. max. a 0.80 0.83 0.93 0.031 0.032 0.036 a1 0.02 0.05 0.0007 0.0019 a3 0.20 0.007 b 0.35 0.40 0.47 0.013 0.015 0.018 d 5.00 0.196 d1 4.75 0.187 d2 4.15 4.20 4.25 0.163 0.165 0.167 e 6.00 0.236 e1 5.75 0.226 e2 3.43 3.48 3.53 0.135 0.137 0.139 e4 2.58 2.63 2.68 0.103 0.105 e 1.27 0.050 l 0.70 0.80 0.90 0.027 0.031 0.035 powerflat? (6x5) mechanical data
stl100nh3ll revision history 11/12 5 revision history table 8. revision history date revision changes 18-apr-2005 1 first release 20-jun-2005 2 updated mechanical data 22-jun-2005 3 new rg value on ta b l e 6 10-oct-2005 4 inserted ecopack indication 09-jan-2006 5 new footprint 08-mar-2006 6 new template 29-jun-2006 7 modified curves, see figure 1 and figure 2 04-sep-2006 8 the document has been reformatted, no content change 04-jan-2007 9 new updated on ta b l e 1
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